A High-Q Electric-Mechano-Magnetic Coupled Resonator for ELF/SLF Cross-Medium Magnetic Communication.

Extremely/super low frequency (ELF/SLF) electromagnetic wave can effectively propagate in the harsh cross-medium environment where a high-frequency electromagnetic wave cannot pass due to the fast decay. For efficiently transmitting a strong ELF/SLF radiation signal, the traditional electromagnetic antenna requires a super-large loop (>10 km). To address this issue, in this work, a piezoelectric ceramic/ferromagnetic heterogeneous structured, cantilever beam-type electric-mechano-magnetic coupled resonator at only centimeter scale for ELF/SLF cross-medium magnetic communication is reported. Through designing hard-soft hybrid step-stiffness elastic beam, the resonator exhibits a much higher quality factor Q (≈240) for ELF/SLF magnetic field transmitting, which is one to five orders of magnitude higher than those of previously reported mechanical antennas and loop coil antennas. Moreover, the resonator exhibits a 5000 times higher magnetic field emitting efficiency compared to a conventional loop coil antenna in ELF/SLF band. It also demonstrates a 200% increase in magnetic field emitting capacity compared to existing piezoelectric-driven antennas. In addition, an ASK+PSK modulation method is proposed for suppressing relaxation time of the resonator, and a reduction in the relaxation time by 80% is observed. Furthermore, an air-seawater cross-medium magnetic field communication is successful demonstrated, indicating its potential as portable, high-efficient antenna for underwater and underground communications.

Ultrafast Optical Nanoscopy of Carrier Dynamics in Silicon Nanowires.

Carrier distribution and dynamics in semiconductor materials often govern their physical properties that are critical to functionalities and performance in industrial applications. The continued miniaturization of electronic and photonic devices calls for tools to probe carrier behavior in semiconductors simultaneously at the picosecond time and nanometer length scales. Here, we report pump-probe optical nanoscopy in the visible-near-infrared spectral region to characterize the carrier dynamics in silicon nanostructures. By coupling experiments with the point-dipole model, we resolve the size-dependent photoexcited carrier lifetime in individual silicon nanowires. We further demonstrate local carrier decay time mapping in silicon nanostructures with a sub-50 nm spatial resolution. Our study enables the nanoimaging of ultrafast carrier kinetics, which will find promising applications in the future design of a broad range of electronic, photonic, and optoelectronic devices.

Breaking Rotational Symmetry in Supertwisted WS2 Spirals via Moiré Magnification of Intrinsic Heterostrain.

Twisted stacking of van der Waals materials with moiré superlattices offers a new way to tailor their physical properties via engineering of the crystal symmetry. Unlike well-studied twisted bilayers, little is known about the overall symmetry and symmetry-driven physical properties of continuously supertwisted multilayer structures. Here, using polarization-resolved second harmonic generation (SHG) microscopy, we report threefold (C3) rotational symmetry breaking in supertwisted WS2 spirals grown on non-Euclidean surfaces, contrasting the intact symmetry of individual monolayers. This symmetry breaking is attributed to a geometrical magnifying effect in which small relative strain between adjacent twisted layers (heterostrain), verified by Raman spectroscopy and multiphysics simulations, generates significant distortion in the moiré pattern. Density-functional theory calculations can explain the C3 symmetry breaking and unusual SHG response by the interlayer wave function coupling. These findings thus pave the way for further developments in the so-called "3D twistronics".

Giant Isotope Effect of Thermal Conductivity in Silicon Nanowires.

Isotopically purified semiconductors potentially dissipate heat better than their natural, isotopically mixed counterparts as they have higher thermal conductivity (κ). But the benefit is low for Si at room temperature, amounting to only ∼10% higher κ for bulk ^{28}Si than for bulk natural Si (^{nat}Si). We show that in stark contrast to this bulk behavior, ^{28}Si (99.92% enriched) nanowires have up to 150% higher κ than ^{nat}Si nanowires with similar diameters and surface morphology. Using a first-principles phonon dispersion model, this giant isotope effect is attributed to a mutual enhancement of isotope scattering and surface scattering of phonons in ^{nat}Si nanowires, correlated via transmission of phonons to the native amorphous SiO_{2} shell. The Letter discovers the strongest isotope effect of κ at room temperature among all materials reported to date and inspires potential applications of isotopically enriched semiconductors in microelectronics.

Selective Gas Permeation in Defect-Engineered Bilayer Graphene.

Defective graphene holds great potential to enable the permeation of gas molecules at high rates with high selectivity due to its one-atom thickness and resultant atomically small pores at the defect sites. However, precise control and tuning of the size and density of the defects remain challenging. In this work, we introduce atomic-scale defects into bilayer graphene via a decoupled strategy of defect nucleation using helium ion irradiation followed by defect expansion using hydrogen plasma treatment. The cotreated membranes exhibit high permeability and simultaneously high selectivity compared to those singly treated by ion irradiation or hydrogen plasma only. High permeation selectivity values for H2/N2 and H2/CH4 of 495 and 877, respectively, are achieved for optimally cotreated membranes. The method presented can also be scaled up to prepare large-area membranes for gas separation, e.g., for hydrogen purification and recovery from H2/CH4 and H2/N2 mixtures.

Band Engineering of Large-Twist-Angle Graphene/h-BN Moiré Superlattices with Pressure.

Graphene interfacing hexagonal boron nitride (h-BN) forms lateral moiré superlattices that host a wide range of new physical effects such as the creation of secondary Dirac points and band gap opening. A delicate control of the twist angle between the two layers is required as the effects weaken or disappear at large twist angles. In this Letter, we show that these effects can be reinstated in large-angle (∼1.8°) graphene/h-BN moiré superlattices under high pressures. A graphene/h-BN moiré superlattice microdevice is fabricated directly on the diamond culet of a diamond anvil cell, where pressure up to 8.3 GPa is applied. The band gap at the primary Dirac point is opened by 40-60 meV, and fingerprints of the second Dirac band gap are also observed in the valence band. Theoretical calculations confirm the band engineering with pressure in large-angle graphene/h-BN bilayers.

Author Correction: Chemical trends of deep levels in van der Waals semiconductors.

A Correction to this paper has been published: https://doi.org/10.1038/s41467-020-20151-x.

Chemical trends of deep levels in van der Waals semiconductors.

Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K.

Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting.

van der Waals (vdW) forces, despite being relatively weak, hold the layers together in transition metal dichalcogenides (TMDs) and play a key role in their band structure evolution, hence profoundly affecting their physical properties. In this work, we experimentally probe the vdW interactions in MoS2 and other TMDs by measuring the valence band maximum (VBM) splitting (Δ) at K point as a function of pressure in a diamond anvil cell. As high pressure increases interlayer wave function coupling, the VBM splitting is enhanced in 2H-stacked MoS2 multilayers but, due to its specific geometry, not in 3R-stacked multilayers, hence allowing the interlayer contribution to be separated out of the total VBM splitting, as well as predicting a negative pressure (2.4 GPa) where the interlayer contribution vanishes. This negative pressure represents the threshold vdW interaction beyond which neighboring layers are electronically decoupled. This approach is compared to first-principles calculations and found to be widely applicable to other group-VI TMDs.

Pressurizing Field-Effect Transistors of Few-Layer MoS2 in a Diamond Anvil Cell.

Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2 and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2 can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.

A standing wave linear ultrasonic motor operating in in-plane expanding and bending modes.

A novel standing wave linear ultrasonic motor operating in in-plane expanding and bending modes was proposed in this study. The stator (or actuator) of the linear motor was made of a simple single Lead Zirconate Titanate (PZT) ceramic square plate (15 × 15 × 2 mm(3)) with a circular hole (D = 6.7 mm) in the center. The geometric parameters of the stator were computed with the finite element analysis to produce in-plane bi-mode standing wave vibration. The calculated results predicted that a driving tip attached at midpoint of one edge of the stator can produce two orthogonal, approximate straight-line trajectories, which can be used to move a slider in linear motion via frictional forces in forward or reverse direction. The investigations showed that the proposed linear motor can produce a six times higher power density than that of a previously reported square plate motor.

A two-layer linear piezoelectric micromotor.

A first bending (B1) mode two-layer piezoelectric ultrasonic linear micromotor has been developed for microoptics driving applications. The piezo-vibrator of the micromotor was composed of two small Pb(Zr,Ti)O3 (PZT-5) plates, with overall dimensions and mass of only 2.0 × 2.0 × 5.0 mm(3) and 0.2 g, respectively. The proposed micromotor could operate either in single-phase voltage (standing wave) mode or two-phase voltage (traveling wave) mode to drive a slider via friction force to provide bidirectional linear motion. A large thrust of up to 0.30 N, which corresponds to a high unit volume direct driving force of 15 mN/mm(3), and a linear movement velocity of up to 230 mm/s were obtained under an applied voltage of 80 Vpp at the B1 mode resonance frequency of 174 kHz.

A square-plate piezoelectric linear motor operating in two orthogonal and isomorphic face-diagonal-bending modes.

We report a piezoelectric linear motor made of a single Pb(Zr,Ti)O3 square-plate, which operates in two orthogonal and isomorphic face-diagonal-bending modes to produce precision linear motion. A 15 × 15 × 2 mm prototype was fabricated, and the motor generated a driving force of up to 1.8 N and a speed of 170 mm/s under an applied voltage of 100 Vpp at the resonance frequency of 136.5 kHz. The motor shows such advantages as large driving force under relatively low driving voltage, simple structure, and stable motion because of its isomorphic face-diagonal-bending mode.